The Resource Breakdown Phenomena In Semiconductors And Semiconductor Devices
Breakdown Phenomena In Semiconductors And Semiconductor Devices
Resource Information
The item Breakdown Phenomena In Semiconductors And Semiconductor Devices represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.This item is available to borrow from 1 library branch.
Resource Information
The item Breakdown Phenomena In Semiconductors And Semiconductor Devices represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.
This item is available to borrow from 1 library branch.
- Summary
- Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi
- Language
- eng
- Extent
- 1 online resource (223 pages)
- Contents
-
- Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; Author Index
- Isbn
- 9789812703330
- Label
- Breakdown Phenomena In Semiconductors And Semiconductor Devices
- Title
- Breakdown Phenomena In Semiconductors And Semiconductor Devices
- Language
- eng
- Summary
- Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi
- Cataloging source
- EBLCP
- http://library.link/vocab/creatorName
- Levinshtein, Michael
- Dewey number
- 621.38152
- Index
- no index present
- LC call number
- TK7871.85 .L463 2005eb
- Literary form
- non fiction
- Nature of contents
- dictionaries
- http://library.link/vocab/relatedWorkOrContributorName
-
- Kostamovaara, Juha
- Vainshtein, Sergey
- http://library.link/vocab/subjectName
-
- Breakdown (Electricity)
- High voltages
- Semiconductors
- Breakdown (Electricity)
- High voltages
- Semiconductors
- Label
- Breakdown Phenomena In Semiconductors And Semiconductor Devices
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- mixed
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; Author Index
- Control code
- 476063254
- Dimensions
- unknown
- Extent
- 1 online resource (223 pages)
- Form of item
- online
- Isbn
- 9789812703330
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Specific material designation
- remote
- System control number
- (OCoLC)476063254
- Label
- Breakdown Phenomena In Semiconductors And Semiconductor Devices
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- mixed
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; Author Index
- Control code
- 476063254
- Dimensions
- unknown
- Extent
- 1 online resource (223 pages)
- Form of item
- online
- Isbn
- 9789812703330
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Specific material designation
- remote
- System control number
- (OCoLC)476063254
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.mst.edu/portal/Breakdown-Phenomena-In-Semiconductors-And/n3vrY3mw_wE/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.mst.edu/portal/Breakdown-Phenomena-In-Semiconductors-And/n3vrY3mw_wE/">Breakdown Phenomena In Semiconductors And Semiconductor Devices</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.mst.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.mst.edu/">Missouri University of Science & Technology Library</a></span></span></span></span></div>
