The Resource Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee
Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee
Resource Information
The item Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.This item is available to borrow from 1 library branch.
Resource Information
The item Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.
This item is available to borrow from 1 library branch.
- Language
- eng
- Extent
- 1 online resource
- Note
- 5.2.1 Lateral Inhibition
- Contents
-
- Front Cover; Half Title; Series Page -- RIVER PUBLISHERS SERIES IN BIOMEDICAL ENGINEERING; Title Page; Copyright Page; Contents; Preface; Acknowledgement; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Chapter 1 -- Introduction; 1.1 Discovery; 1.2 The Missing Memristor; 1.2.1 Definitions; 1.2.2 DC Response of an Ideal Memristor; 1.2.3 AC Response of an Ideal Memristor; 1.2.4 AC Response of an Ideal Memristor: Higher Frequencies; 1.2.5 Some Further Observations; 1.2.5.1 Requirement 1: Nonlinearity; 1.2.5.2 Requirement 2: Continuous ' v. q
- 1.2.5.3 Requirement 3: Strictly monotonically increasing ' v. q1.2.6 Summary; 1.3 Memristive Devices and Systems; 1.3.1 Definitions; 1.3.2 Resistive Switching Mechanisms; 1.3.3 Transport of Mobile Ions; 1.3.4 Formation of Conduction Filaments; 1.3.5 Phase Change Transitions; 1.3.6 Resonant Tunneling Diodes; 1.3.7 Magnetoresistive Memory, Nanoparticles and Multi-State Devices; 1.3.7.1 Spin-transfer torque; 1.3.7.2 Nanoparticles; 1.3.7.3 Multi-state memories; 1.4 Neuromorphic Computing; 1.4.1 Memristive Synapse; 1.4.2 Memristive Neuron; 1.4.3 Memristive Neural Networks
- 1.4.3.1 Crossbar processing: Read1.4.3.2 Crossbar processing: Write; 1.4.3.3 Crossbar processing: Training; 1.5 Looking Forward; References; Chapter 2 -- Crossbar Memory Simulation and Performance Evaluation; 2.1 Introduction; 2.1.1 Motivation; 2.1.2 Contrast with Competing Technologies; 2.1.3 Amorphous Si Crossbar Memory Cell; 2.2 Structure; 2.2.1 Crossbar Modeling; 2.3 Write Strategy and Circuit Implementation; 2.4 Read Strategy and Circuit Implementation; 2.5 Memory Architecture; 2.6 Power Dissipation; 2.6.1 Power Estimation; 2.6.2 Analytical Modeling on Static Power; 2.7 Noise Analysis
- 2.8 Area Overhead2.8.1 Bank-based System Design; 2.9 Technology Comparison; References; Chapter 3 -- Memristor Digital Memory; 3.1 Introduction; 3.2 Adaptive Reading and Writing in Memristor Memory; 3.3 Simulation Results; 3.3.1 High State Simulation (HSS); 3.3.2 Background Resistance Sweep (BRS); 3.3.3 Minimum Resistance Sweep (MRS); 3.3.4 Diode Leakage Current (DLC); 3.3.5 Power Modeling; 3.4 Adaptive Methods Results and Discussion; 3.5 Chapter Summary; References; Chapter 4 -- Multi-Level Memory Architecture; 4.1 Introduction; 4.2 Multi-State Memory Architecture; 4.2.1 Architecture
- 4.2.2 Read/Write Circuitry4.2.3 Array Voltage Bias Scheme; 4.2.4 Read/Write Operations Flow; 4.2.5 State Derivations; 4.3 Read/Write Operations; 4.3.1 Read/Write Simulations; 4.3.2 Read Disturbances to the Neighboring Cells; 4.4 Effects of Variations; 4.4.1 Variations in Programming Voltage; 4.4.2 Variations in Series Resistance; 4.4.3 Reduced-Impact Read Scheme; 4.4.4 Resistance Distributions after Array Writes; 4.5 Conclusion; References; Chapter 5 -- Neuromorphic Building Blocks with Memristors; 5.1 Introduction; 5.2 Implementing Neuromorphic Functions with Memristors
- Isbn
- 9788770220590
- Label
- Neuromorphic circuits for nanoscale devices
- Title
- Neuromorphic circuits for nanoscale devices
- Statement of responsibility
- Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee
- Language
- eng
- Cataloging source
- EBLCP
- http://library.link/vocab/creatorName
- Mazumder, Pinaki
- Dewey number
- 621.381
- Index
- index present
- LC call number
- TK7875
- LC item number
- .M39 2019
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorName
-
- Yilmaz, Yalcin
- Ebong, Idongesit
- Lee, Woo Hyung
- Series statement
- River Publishers series in biomedical engineering
- http://library.link/vocab/subjectName
-
- Nanoelectromechanical systems
- Neuromorphics
- Nanoelectromechanical systems
- Neuromorphics
- Label
- Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee
- Note
- 5.2.1 Lateral Inhibition
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Front Cover; Half Title; Series Page -- RIVER PUBLISHERS SERIES IN BIOMEDICAL ENGINEERING; Title Page; Copyright Page; Contents; Preface; Acknowledgement; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Chapter 1 -- Introduction; 1.1 Discovery; 1.2 The Missing Memristor; 1.2.1 Definitions; 1.2.2 DC Response of an Ideal Memristor; 1.2.3 AC Response of an Ideal Memristor; 1.2.4 AC Response of an Ideal Memristor: Higher Frequencies; 1.2.5 Some Further Observations; 1.2.5.1 Requirement 1: Nonlinearity; 1.2.5.2 Requirement 2: Continuous ' v. q
- 1.2.5.3 Requirement 3: Strictly monotonically increasing ' v. q1.2.6 Summary; 1.3 Memristive Devices and Systems; 1.3.1 Definitions; 1.3.2 Resistive Switching Mechanisms; 1.3.3 Transport of Mobile Ions; 1.3.4 Formation of Conduction Filaments; 1.3.5 Phase Change Transitions; 1.3.6 Resonant Tunneling Diodes; 1.3.7 Magnetoresistive Memory, Nanoparticles and Multi-State Devices; 1.3.7.1 Spin-transfer torque; 1.3.7.2 Nanoparticles; 1.3.7.3 Multi-state memories; 1.4 Neuromorphic Computing; 1.4.1 Memristive Synapse; 1.4.2 Memristive Neuron; 1.4.3 Memristive Neural Networks
- 1.4.3.1 Crossbar processing: Read1.4.3.2 Crossbar processing: Write; 1.4.3.3 Crossbar processing: Training; 1.5 Looking Forward; References; Chapter 2 -- Crossbar Memory Simulation and Performance Evaluation; 2.1 Introduction; 2.1.1 Motivation; 2.1.2 Contrast with Competing Technologies; 2.1.3 Amorphous Si Crossbar Memory Cell; 2.2 Structure; 2.2.1 Crossbar Modeling; 2.3 Write Strategy and Circuit Implementation; 2.4 Read Strategy and Circuit Implementation; 2.5 Memory Architecture; 2.6 Power Dissipation; 2.6.1 Power Estimation; 2.6.2 Analytical Modeling on Static Power; 2.7 Noise Analysis
- 2.8 Area Overhead2.8.1 Bank-based System Design; 2.9 Technology Comparison; References; Chapter 3 -- Memristor Digital Memory; 3.1 Introduction; 3.2 Adaptive Reading and Writing in Memristor Memory; 3.3 Simulation Results; 3.3.1 High State Simulation (HSS); 3.3.2 Background Resistance Sweep (BRS); 3.3.3 Minimum Resistance Sweep (MRS); 3.3.4 Diode Leakage Current (DLC); 3.3.5 Power Modeling; 3.4 Adaptive Methods Results and Discussion; 3.5 Chapter Summary; References; Chapter 4 -- Multi-Level Memory Architecture; 4.1 Introduction; 4.2 Multi-State Memory Architecture; 4.2.1 Architecture
- 4.2.2 Read/Write Circuitry4.2.3 Array Voltage Bias Scheme; 4.2.4 Read/Write Operations Flow; 4.2.5 State Derivations; 4.3 Read/Write Operations; 4.3.1 Read/Write Simulations; 4.3.2 Read Disturbances to the Neighboring Cells; 4.4 Effects of Variations; 4.4.1 Variations in Programming Voltage; 4.4.2 Variations in Series Resistance; 4.4.3 Reduced-Impact Read Scheme; 4.4.4 Resistance Distributions after Array Writes; 4.5 Conclusion; References; Chapter 5 -- Neuromorphic Building Blocks with Memristors; 5.1 Introduction; 5.2 Implementing Neuromorphic Functions with Memristors
- Control code
- 1125114486
- Dimensions
- unknown
- Extent
- 1 online resource
- File format
- unknown
- Form of item
- online
- Isbn
- 9788770220590
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)1125114486
- Label
- Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee
- Note
- 5.2.1 Lateral Inhibition
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Front Cover; Half Title; Series Page -- RIVER PUBLISHERS SERIES IN BIOMEDICAL ENGINEERING; Title Page; Copyright Page; Contents; Preface; Acknowledgement; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Chapter 1 -- Introduction; 1.1 Discovery; 1.2 The Missing Memristor; 1.2.1 Definitions; 1.2.2 DC Response of an Ideal Memristor; 1.2.3 AC Response of an Ideal Memristor; 1.2.4 AC Response of an Ideal Memristor: Higher Frequencies; 1.2.5 Some Further Observations; 1.2.5.1 Requirement 1: Nonlinearity; 1.2.5.2 Requirement 2: Continuous ' v. q
- 1.2.5.3 Requirement 3: Strictly monotonically increasing ' v. q1.2.6 Summary; 1.3 Memristive Devices and Systems; 1.3.1 Definitions; 1.3.2 Resistive Switching Mechanisms; 1.3.3 Transport of Mobile Ions; 1.3.4 Formation of Conduction Filaments; 1.3.5 Phase Change Transitions; 1.3.6 Resonant Tunneling Diodes; 1.3.7 Magnetoresistive Memory, Nanoparticles and Multi-State Devices; 1.3.7.1 Spin-transfer torque; 1.3.7.2 Nanoparticles; 1.3.7.3 Multi-state memories; 1.4 Neuromorphic Computing; 1.4.1 Memristive Synapse; 1.4.2 Memristive Neuron; 1.4.3 Memristive Neural Networks
- 1.4.3.1 Crossbar processing: Read1.4.3.2 Crossbar processing: Write; 1.4.3.3 Crossbar processing: Training; 1.5 Looking Forward; References; Chapter 2 -- Crossbar Memory Simulation and Performance Evaluation; 2.1 Introduction; 2.1.1 Motivation; 2.1.2 Contrast with Competing Technologies; 2.1.3 Amorphous Si Crossbar Memory Cell; 2.2 Structure; 2.2.1 Crossbar Modeling; 2.3 Write Strategy and Circuit Implementation; 2.4 Read Strategy and Circuit Implementation; 2.5 Memory Architecture; 2.6 Power Dissipation; 2.6.1 Power Estimation; 2.6.2 Analytical Modeling on Static Power; 2.7 Noise Analysis
- 2.8 Area Overhead2.8.1 Bank-based System Design; 2.9 Technology Comparison; References; Chapter 3 -- Memristor Digital Memory; 3.1 Introduction; 3.2 Adaptive Reading and Writing in Memristor Memory; 3.3 Simulation Results; 3.3.1 High State Simulation (HSS); 3.3.2 Background Resistance Sweep (BRS); 3.3.3 Minimum Resistance Sweep (MRS); 3.3.4 Diode Leakage Current (DLC); 3.3.5 Power Modeling; 3.4 Adaptive Methods Results and Discussion; 3.5 Chapter Summary; References; Chapter 4 -- Multi-Level Memory Architecture; 4.1 Introduction; 4.2 Multi-State Memory Architecture; 4.2.1 Architecture
- 4.2.2 Read/Write Circuitry4.2.3 Array Voltage Bias Scheme; 4.2.4 Read/Write Operations Flow; 4.2.5 State Derivations; 4.3 Read/Write Operations; 4.3.1 Read/Write Simulations; 4.3.2 Read Disturbances to the Neighboring Cells; 4.4 Effects of Variations; 4.4.1 Variations in Programming Voltage; 4.4.2 Variations in Series Resistance; 4.4.3 Reduced-Impact Read Scheme; 4.4.4 Resistance Distributions after Array Writes; 4.5 Conclusion; References; Chapter 5 -- Neuromorphic Building Blocks with Memristors; 5.1 Introduction; 5.2 Implementing Neuromorphic Functions with Memristors
- Control code
- 1125114486
- Dimensions
- unknown
- Extent
- 1 online resource
- File format
- unknown
- Form of item
- online
- Isbn
- 9788770220590
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)1125114486
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.mst.edu/portal/Neuromorphic-circuits-for-nanoscale-devices/JUj5XRXwYf8/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.mst.edu/portal/Neuromorphic-circuits-for-nanoscale-devices/JUj5XRXwYf8/">Neuromorphic circuits for nanoscale devices, Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.mst.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.mst.edu/">Missouri University of Science & Technology Library</a></span></span></span></span></div>
