Ferroelectric thin films : basic properties and device physics for memory applications
Resource Information
The work Ferroelectric thin films : basic properties and device physics for memory applications represents a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.
The Resource
Ferroelectric thin films : basic properties and device physics for memory applications
Resource Information
The work Ferroelectric thin films : basic properties and device physics for memory applications represents a distinct intellectual or artistic creation found in Missouri University of Science & Technology Library.
- Label
- Ferroelectric thin films : basic properties and device physics for memory applications
- Title remainder
- basic properties and device physics for memory applications
- Statement of responsibility
- Masanori Okuyama, Yoshihiro Ishibashi (eds.)
- Language
- eng
- Cataloging source
- LWU
- NLM call number
-
- W1
- QC 596.5
- NLM item number
-
- TO539E v.98 2005
- F395 2005
- Series statement
- Topics in applied physics,
- Series volume
- v. 98
Context
Context of Ferroelectric thin films : basic properties and device physics for memory applicationsWork of
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.mst.edu/resource/DD6jnTPj1Qc/" typeof="CreativeWork http://bibfra.me/vocab/lite/Work"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.mst.edu/resource/DD6jnTPj1Qc/">Ferroelectric thin films : basic properties and device physics for memory applications</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.mst.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.mst.edu/">Missouri University of Science & Technology Library</a></span></span></span></span></div>
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.mst.edu/resource/DD6jnTPj1Qc/" typeof="CreativeWork http://bibfra.me/vocab/lite/Work"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.mst.edu/resource/DD6jnTPj1Qc/">Ferroelectric thin films : basic properties and device physics for memory applications</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.mst.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.mst.edu/">Missouri University of Science & Technology Library</a></span></span></span></span></div>